MOS

MOS的基本解释

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金属氧化物半导体

相似词

mos

与MOS相关的网络例句 [注：此内容来源于网络，仅供参考]

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

After 44 h IVM, MOS level in the immatured ooeytes was higher than matured oocytes, and there was less MOS in nucleus than in the cytoplasm at 6 h after matured oocytes were activated; RNAi was performed before IVM, and all the three siRNA applied could successfully knockdown the level of c-mos mRNA, which were 0.08 ± 0.03, 0.11 ± 0.06 and 0.20± 0.06 times of the control group respectively, and the quantity of MOS was obvious decreased compared with the control group at the same stage.

本实验通过RT- PCR、免疫荧光激光共聚焦检测方法检测了猪卵母细胞在体外成熟培养过程中c-mos基因在转录水平、翻译水平上的表达以及蛋白的分布，并应用注射小干扰RNA方法对其进行了RNA干扰研究。

In this dissertation, the research and design of DCO is conducted and the principal contributions are as follows.In this dissertation, the non-ideal characteristics of traditional MOS varactors used in the DCO are analyzed, and an inversion-mode digitally controlled MOS varactor is proposed to alleviate the non-ideal characteristics. The phase noise of the DCO using inversion-mode varactors can be up to 9.5 dB lower than that of the DCO using traditional MOS varactors.

本论文针对应用于CMOS无线通信收发机的新型全数控LC振荡器，完成了以下工作：分析了DCO所使用的普通数控MOS变容管中所存在的非理想特性，提出了使用反型数控MOS变容管改善这一非理想特性的方法，该方法可以将DCO中的相位噪声最多降低9.5dB。

与MOS相关的网络解释 [注：此内容来源于网络，仅供参考]

Mos Eisley Cantina：莫斯.艾斯利 酒馆

Mos Eisley:莫斯.艾斯利 | Mos Eisley Cantina:莫斯.艾斯利 酒馆 | Mos Espa:莫斯.艾斯帕

Mos Eisley Cantina：莫斯艾斯利的堪提那会所

Mos Eisley 莫斯艾斯利 | Mos Eisley Cantina 莫斯艾斯利的堪提那会所 | Mos Espa 莫斯艾斯帕

MOS management operating system：管理运行系统

MOS Maintenance Operation Subsystem 维护运行子系统 | MOS Management Operating System 管理运行系统 | MOS Master Operating System 主*作系统