INP

INP的基本解释

abbr.

Index Number of Prices 物价指数, International News Photos国际新闻图片社

与INP相关的网络例句 [注：此内容来源于网络，仅供参考]

By using Transmission Line Model to investigate the ohmic contact of electrode metal and InP semiconductor. We got a low specific contact resistively of 2.24×10-5 Ω-cm2 of the AuBe/Cr/Au contact to p-InP.

我们用Transmission Line Model方式得到低的特徵接触电阻约2.24×10-5 Ω-cm2之AuBe/Cr/Au属和p-InP形成的欧姆接触。

Secondly, the spatial distribution of transport properties of GaP and InP bulks, including electric fields, drift velocities and mobility, are calculated at different applied voltages and an overshoot phenomena in the electron densities and drift velocities of the GaP and InP bulks under the high electric field was found.

同时计算了GaP和InP体材料输运性质，分析了它们的电场强度、漂移速度和迁移率在不同偏置电压下的空间分布，以及电子密度和漂移速度在高电场下的过冲现象。

In this dissertation, InGaAs/InGaAsP/InP MQW microdisk laser and its characterization were presented. Some conclusions are as following: the characteristics of lasing threshold was discussed by using rate equation. The dependent relations between threshold and cavity volume, spontaneous emission coupling efficiency β were investigated. The whispering gallery mode and spontaneous emission in a microdisk geometry were then studied. Almost all spontaneous emission was coupled into the lowest order TE mode when the normalized thickness of photonics well was between 0.15 and 0.5. The design principle and device process of InGaAs/InGaAsP/InP MQW microdisk laser were presented. The microdisk lasers with the diameter of 8μm, 4. 5μm and 2μm were succesfully fabricated by using etching techniques. The pulse lasing thresholds for the microdisk with the diameter of 8μm and 4. 5μm were 170μW and 15μW, a record results compared with the published in the literature. The cw lasing threshold for a 2-μm-diameter microdisk was only a few μW. We haven't found similar report up to now. To solve the problem of directional output in a microdisk laser, the power coupling efficiency in a double disk geometry was investigated with the theory of waveguide mode couple. A new structure of electrically pumped microdisk laser with output waveguide was designed, making a foundation for the practical use of microdisk laser.

本文主要研究InGaAs/InGaAsP/InP多量子阱半导体碟型激光器的研制和特性表征，并取得如下结果：利用速率方程理论讨论了激光器激射阈值的特性，分析了阈值与腔体积和自发发射耦合系数β之间的关系；讨论了微碟光子阱结构中的自发发射特性和微碟中WGM模式特性；光子阱结构在其归一化厚度在0.15-0.5之间时，几乎全部自发发射进入到最低阶TE模式中；研究了InGaAs/InGaAsP/InP多量子阱微碟激光器的结构设计原理和器件的制备工艺；利用刻蚀方法成功制备出直径分别为8μm、4.5μm、2μm的碟型微腔激光器；直径8μm和4.5μm的微碟脉冲光泵浦激射阈值分别为170μW、15μW，是目前所见文献报导中比较低的；直径2μm的微碟连续光泵浦激射阈值仅几μW，目前尚未见到达到类似结果的研究报导；为解决微碟激光器激射光定向引出的问题，通过波导耦合模理论分析了双层碟之间功率耦合效率；据此设计了新型带耦合输出波导的电泵浦微腔激光器，为进一步研制可实用的电泵浦微腔激光器打下基础。

与INP相关的网络解释 [注：此内容来源于网络，仅供参考]

breakdown voltage：击穿电压

随着近来IDM大厂的投入,SiGe 技术已逐步在截止频率(fT)与击穿电压(Breakdown voltage)过低等问题获得改善而日趋实用. 除了上述的制程外,其它逐步应用在无线通信高频组件的基材还有磷化铟(InP)或GaAs on Si等制程. 前者较砷化镓更适于高频应用,

GUR"：新兴欧洲

被相关财经投资网站列为美股热门的ETF有道富黄金(GLD)、美国石油(USO)、德银农业(DBA)、罗杰斯商品(RJI)、煤(KOL)、钢铁(SLX),新兴市场的热门ETF有MSCI金砖四国(BKF)、MSCI南非(EZA)、中东非洲(GAF)、印度(INP)、俄罗斯(RSX)、全球新兴市场(EEM)、新兴欧洲(GUR)、新兴亚太(GMF)等,

INV invertor：倒相器,翻转器,反相器,变换器

INP input 输入(端口) | INV invertor 倒相器,翻转器,反相器,变换器 | Inverse 倒相