英语人>词典>英汉 : C-washer的中文,翻译,解释,例句
C-washer的中文,翻译,解释,例句

C-washer

C-washer的基本解释
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开口垫圈

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Compared with the graphite, the coefficients of friction of the RL-C/C are lower under the same load of about 0.08-0.12, and the increasing range of the volume losses are still lower than those of the graphite. Compared with the SL pyrocarbon material, the COF and the volume loss of the SL-C/C are about 0.02-0.05 and 0.2 mm^3, lower than those under the same load. The COFs of most RL-C/C and SL-C/C specimens remain stable or decrease slightly with time, while those of the graphite and pyrocarbon specimens increase. The thickness of the integrated friction film of the RL-C/C decreases with load, but the wear surface of the SL-C/C is rough. Tough the wear surface of the graphite is integrated, the serious abrasive wear make the debris move easily and accumulate on the edge of the wear trace to form a restacked morphology. On the wear surface of the pyrocarbon material, some loosed debris, circular worn holes and flake worn out pyrocarbon has been found.

结果表明:PAN炭纤维改善C/C复合材料的摩擦磨损行为;在实验载荷范围内,与高强度石墨材料相比,含RL炭C/C复合材料的摩擦因数降低0.08~0.12;体积磨损量增幅降低;与热解炭试样相比,具有SL炭C/C复合材料的摩擦因数降低0.02~0.05,体积磨损量低0.2立方公厘左右;随着时间的延长,大部分C/C复合材料的摩擦因数基本相对稳定或呈小幅下降,而石墨、热解炭块的摩擦因数均呈不同幅度的上升;具有RL炭的C/C复合材料摩擦表面膜厚度随载荷增加而降低,具有SL炭的C/C复合材料摩擦表面较粗糙;高强石墨能形成较完整致密的摩擦膜,但磨粒磨损严重,磨屑易在摩擦膜边缘形成层状堆积;热解炭块摩擦表面磨屑堆积松散,有较多的孔洞以及热解炭层整体剥落的形貌。

The present invention concerns the compounds having the formula N-oxides, salts, stereoisomeric forms, racemic mixtures, prodrugs, esters and metabolites thereof, wherein R1 and R8 each are H, optionally substituted C1-6alkyl, C2-6alkenyl, C3-7cycloalkyl, aryl, Het1, Het2; R1 may also be a radical of formula (R11aR11b)NC(R10aR10b)CR9-; t is 0, 1 or 2; R2 is H or C1-6alkyl; L is -C-,-O-C-,-NR8-C-,-O-C1-6alkanediyl-C-,-NR8-C1-6alkanediyl-C-,-S2-,-O-S2-,-NR8-S2 ; R3 is C1-6alkyl, aryl, C3-7cycloalkyl, C3-7cycloalkylC1-4alkyl, or arylC1-4alkyl; R4 is H, C1-4alkylOC, carboxyl, aminoC, mono- or di(C1-4alkyl)aminoC, C3-7cycloalkyl, C2-6alkenyl, C2-6alkynyl or optionally substituted C1-6alkyl; R5 and R6 are H or C1-6alkyl.

本发明涉及右式化合物其N-氧化物、盐、立体异构形式、外消旋混合物、前药、酯及代谢物,其中R 1 及R 8 各是氢、C 1-6 烷基、C 2-6 烯基、C 3-7 环烷基、芳基、Het 1 、Het 2 ;R 1 也可以是式(R 11a R 11b )NC(R 10A R 10b )CR 9 -之基;t是0、1或2;R 2 是氢或C 1-6 烷基;L是-C-、-O-C-、-NR 8 -C-、-O-C 1-6 烷二基-C-、-NR 8 -C 1-6 烷二基-C-、-S 2 -,-O-S 2 -、-NR 8 -S 2 -;R 3 是C 1-6 烷基、芳基、C 3-7 环烷基、C 3-7 环烷基C 1-4 烷基或芳基C 1-4 烷基;R 4 是氢、C 1-4 烷基OC、羧基、氨基C、一-或二(C 1-4 烷基)氨基C、C 3-7 环烷基、C 2-6 烯基、C 2-6 炔基或任选被取代的C 1-6 烷基;R 5 及R 6 是氢或C 1-6 烷基。

Pinout: C High-performance 32-bit RISC Architecture C High-density 16-bit Instruction Set C Leader in MIPS/Watt C Little-endian C Embedded ICE (In-circuit Emulation) 8-, 16- and 32-bit Read and Write Support 256K Bytes of On-chip SRAM C 32-bit Data Bus C Single-clock Cycle Access Fully Programmable External Bus Interface C Maximum External Address Space of 64M Bytes C Up to Eight Chip Selects C Software Programmable 8/16-bit External Data Bus Eight-level Priority, Individually Maskable, Vectored Interrupt Controller C Four External Interrupts, including a High-priority, Low-latency Interrupt Request 32 Programmable I/O Lines Three-channel 16-bit Timer/Counter C Three External Clock Inputs C Two Multi-purpose I/O Pins per Channel Two USARTs C Two Dedicated Peripheral Data Controller Channels per USART Programmable Watchdog Timer Advanced Power-saving Features C CPU and Peripheral Can be Deactivated Individually Fully Static Operation: C 0 Hz to 75 MHz Internal Frequency Range at VDDCORE = 1.8V, 85C 2.7V to 3.6V I/O Operating Range 1.65V to 1.95V Core Operating Range -40C to +85C Temperature Range Available in 100-lead TQFP Package

M5L8253P-5引脚说明: C型高性能32位RISC架构C高密度以MIPS /瓦C小端C十六位指令集C领袖嵌入式冰8 - 16 -位和32位的读写支持256K的片上SRAM的 32位数据总线C单时钟周期存取字节完全可编程的外部总线接口C最大的外部地址空间的64M字节多达8个C芯片选择C软件可编程8位外部数据总线8级优先级,独立可屏蔽,向量中断控制器C四外部中断,其中包括一个高优先级,低延迟中断要求32个可编程I / O口线三通道16位定时器/计数器C三个外部时钟输入C两多用途I / O引脚每通道2个通用同步C两专用外设数据控制器通道每个USART可编程看门狗定时器先进的节能特性 CPU和外设可停用独立全静态工作中:C 0 Hz至75 MHz的频率范围内的VDDCORE = 1.8,85℃2.7V到3.6VI / O的操作1.65V到1.95V范围核心工作电压范围在- 40C至+85 C温度范围内使用的100引脚TQFP封装

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